SiCrystal Overview
- Founded
-
1996

- Status
-
Acquired/Merged
- Employees
-
200

- Latest Deal Type
-
M&A
- Financing Rounds
-
1
SiCrystal General Information
Description
Producer of single crystalline silicon carbide (SiC) wafers. The company produces and and supplies high-quality single crystalline silicon carbide (SiC) wafers for customers in Germany.
Contact Information
Website
www.sicrystal.de
Ownership Status
Acquired/Merged
(Operating Subsidiary)
(Operating Subsidiary)
Financing Status
Corporate Backed or Acquired
Primary Office
- Thurn-und-Taxis-Straße 20
- 90411 Nurnberg
- Germany
+49 0911 0000000
SiCrystal Valuation & Funding
Deal Type | Date | Amount | Valuation/ EBITDA |
Post-Val | Status | Debt |
---|
SiCrystal Patents
SiCrystal Recent Patent Activity
Publication ID | Patent Title | Status | First Filing Date | Technology (CPC) | Citations |
---|---|---|---|---|---|
DE-102016202523-A1 | Process for the purification of a monocrystalline sic substrate and sic substrate | Inactive | 18-Feb-2016 | 000000000000 | 00 |
DE-102014217956-B4 | A method of producing a vanadium-doped sic bulk single crystal and a vanadium-doped sic substrate | Active | 09-Sep-2014 | 000000000 | 0 |
DE-102014217956-A1 | A method of producing a vanadium-doped sic bulk single crystal and a vanadium-doped sic substrate | Active | 09-Sep-2014 | 000000000 | 0 |
JP-2016056088-A | Sic massive single crystal doped with vanadium and sic substrate doped with vanadium | Active | 09-Sep-2014 | 000000000 | 00 |
US-20160068994-A1 | Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate | Active | 09-Sep-2014 | C30B23/02 |
SiCrystal Executive Team (1)
Name | Title | Board Seat | Contact Info |
---|---|---|---|
Robert Eckstein | Board Member, Chief Executive Officer & Managing Director |
SiCrystal Board Members (1)
Name | Representing | Role | Since |
---|---|---|---|
000000 00000000 | SiCrystal | Board Member, Chief Executive Officer & Managing Director | 000 0000 |