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Basic 3C

Basic 3C
2014 FOUNDED
PRIVATE STATUS
Debt LATEST DEAL TYPE
4 INVESTORS
Description

Manufacturer of silicon carbide semiconductors designed to help in power conversion. The company's silicon carbide semiconductors use hot filament chemical vapor deposition (HFCVD) process to enhance the reactivity of precursors, enabling clients to control temperature while maintaining high growth rate and low defect density, on non-native substrates.

Website
Ownership Status
Privately Held (backing)
Financing Status
Venture Capital-Backed
Primary Industry
Application Specific Semiconductors
Other Industries
Other Semiconductors
Primary Office
  • 1002 Walnut Street
  • Suite 202
  • Boulder, CO 80302
  • United States
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Basic 3C Valuation and Funding

Deal Type Date Amount Raised to Date Post-Val Status Stage
3. Debt - General 07-Jun-2016 000 Completed Generating Revenue
2. Early Stage VC (Series A) 03-Feb-2016 000 000 00.000 Completed Startup
1. Grant 13-Mar-2014 $250K Completed Startup
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Basic 3C Cap Table

Stock # of Shares
Authorized
Par Value Dividend Rate (%) Original
Issue Price
Liquidation Liquidation
Pref. Multiple
Conversion
Price
% Owned
Series A-2 0,000,000 00.000000 00.00 00.00 00 00.00 00.000
Series A-1 0,000,000 00.000000 00.0 00.0 00 00.0 00.000
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Basic 3C Investors (4)

Investor Name Investor Type Holding Investor Since Participating Rounds Board
Seat
Contact
Info
Dankat Corporation Minority 000 0000 000000 0
Infield Capital Venture Capital Minority 000 0000 000000 0
Norman Vickers Angel (individual) Minority 000 0000 000000 0
Colorado Office of Economic Development & International Trade SBIC 000 0000 000000 0

Basic 3C Executive Team (4)

Name Title Board
Seat
Contact
Info
Michael Cromar Ph.D Vice President, Engineering

3 Former Executives

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Basic 3C Board Members (4)

Name Representing Role Since Contact
Info
Dan Yost Dankat Board Member 000 0000
David Moll Infield Capital Board Member 000 0000
Norman Vickers Self Board Member 000 0000

1 Former Board Member

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