Spin Memory Overview
- Year Founded
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2007
- Status
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Out of Business
- Employees
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25
- Latest Deal Type
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Liquidation
Spin Memory General Information
Description
Developer of spin-transfer magneto-resistive random access memory technology designed to offer enhanced speed-power-endurance operating point. The company's technology offers MRAM solutions to replace on-chip SRAM, stand-alone persistent memories, and a range of other non-volatile memories, enabling clients with lower cost and no leakage power, without the endurance and data retention limitations of other STT-MRAM implementations.
Contact Information
Website
www.spinmemory.comCorporate Office
- 45500 Northport Loop West
- Fremont, CA 94538
- United States
Corporate Office
- 45500 Northport Loop West
- Fremont, CA 94538
- United States
Spin Memory Valuation & Funding
| Deal Type | Date | Amount | Raised to Date | Post-Val | Status | Stage |
|---|---|---|---|---|---|---|
| 4. Bankruptcy: Liquidation | 25-Jun-2021 | Completed | Bankruptcy: Liquidation | |||
| 3. Later Stage VC (Series B1) | 16-Jul-2020 | Completed | Generating Revenue | |||
| 2. Debt - PPP | 16-Apr-2020 | $999K | $70M | Completed | Generating Revenue | |
| 1. Later Stage VC (Series A) | 09-Oct-2014 | $70M | $70M | Completed | Generating Revenue |
Spin Memory Cap Table
| Stock | # of Shares Authorized |
Par Value | Dividend Rate (%) | Original Issue Price |
Liquidation | Liquidation Pref. Multiple |
Conversion Price | % Owned |
|---|---|---|---|---|---|---|---|---|
| Series B1 | ||||||||
| Series B2 | ||||||||
| Series A | 5,902,192 | $0.001000 | $11.86 | $11.86 | 1x | $11.86 | 13.86% |
Spin Memory Related Research & Analysis
Explore institutional-grade private market research from our team of analysts.
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Verticals
Spin Memory Patents
Spin Memory Recent Patent Activity
| Publication ID | Patent Title | Status | First Filing Date | Technology (CPC) | Citations |
|---|---|---|---|---|---|
| US-20190296220-A1 | Magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer | Inactive | 23-Mar-2018 | ||
| US-20190296223-A1 | Methods of manufacturing three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer | Inactive | 23-Mar-2018 | ||
| US-20190296228-A1 | Three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer | Inactive | 23-Mar-2018 | ||
| US-20190295618-A1 | Magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer | Inactive | 23-Mar-2018 | ||
| JP-2021507543-A | How to combine nvm class and sram class mram elements on the chip | Active | 30-Dec-2017 | H10N50/80 |
Spin Memory Signals
Growth Rate
Growth
Size Multiple
Key Data Points
Similarweb Unique Visitors
Majestic Referring Domains
Spin Memory FAQs
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When was Spin Memory founded?
Spin Memory was founded in 2007.
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Where is Spin Memory headquartered?
Spin Memory is headquartered in Fremont, CA.
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What is the size of Spin Memory?
Spin Memory has 25 total employees.
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What industry is Spin Memory in?
Spin Memory’s primary industry is Application Specific Semiconductors.
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Is Spin Memory a private or public company?
Spin Memory is a Private company.
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What is Spin Memory’s current revenue?
The current revenue for Spin Memory is .
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How much funding has Spin Memory raised over time?
Spin Memory has raised $130M.
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